Research published this week in the "natural

Add artificial edge that allows atomic layer of molybdenum disulfide neat growthTechnology Daily News According to physicist organizational networks reported recently, Rice University and Oak Ridge National Laboratory (ORNL) developed in collaboration with scientists a new method that can control the molybdenum disulfide (MDS) consistently neat atomic layer growth , to manufacture two-dimensional electronic device toward a step forward .  Research published this week in the "natural . Materials Science " magazine. Molybdenum disulfide is a semiconductor manufacturing functional components are required for two-dimensional electron in one of the three materials , they are expected to be made ​​invisible devices based components.  In the latest study , the scientists hope to figure out a large and high-quality atom thick sheet of molybdenum disulfide Can the chemical vapor deposition (CVD) furnaces grow and what features they have . They want Molybdenum crucible disulfide with no band gap of graphene and hexagonal boron nitride insulator (hBN) binding, thereby making appearances effect transistor logic integrated circuits, photodetectors and flexible optoelectronic devices.
Last year, Rice University mechanical engineering and materials science professor Lou jun ( transliteration ) and Plymouth Kerr ? Ajayan said they successfully produced graphene and hexagonal boron nitride formed complex staggered structure, but in order to use they manufacture of advanced electronic equipment, also need a third material - molybdenum disulfide .. However, they said: "The will of molybdenum disulfide and carbon atoms together, we want graphene and molybdenum disulfide ( with hexagonal boron nitride ) combine to create a novel two-dimensional semiconductor parts , but because of their different structures , growth environment is different, so there are a lot of difficulties . "
They have not found a good way to grow molybdenum disulfide, many try to get the material structure is also inconsistent with the chemical vapor deposition method create molybdenum disulfide particles too small to have useful electrical properties. CNMn. But in the new approach, they noted molybdenum disulfide "islands" formed in the furnace is easy , blemishes and even dirt block will appear in the base of the furnace . Rice University graduate Niina ? Naye Mei said: " with hexagonal boron nitride or graphene is different, molybdenum disulfide difficult nucleation .  However, we found that by adding artificial edge toward the base , you can control the nucleation process , and, in between these structures , molybdenum disulfide grow better .new method be grown particles is about 100 microns , within the nanometer scale , enough for us to be processed . "